LOGIC 80V N沟道MOSFET 80V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
Features
• 12.9A, 80V, RDSon= 0.1Ω@VGS= 10 V
• Low gate charge typical 8.8 nC
• Low Crss typical 29 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirements allowing direct operation from logic drives
额定电压DC 80.0 V
额定电流 9.30 A
漏源极电阻 210 mΩ
极性 N-Channel
耗散功率 40W Tc
漏源极电压Vds 80 V
漏源击穿电压 80.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 9.30 A
输入电容Ciss 280pF @25VVds
额定功率Max 40 W
耗散功率Max 40W Tc
安装方式 Through Hole
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99