FDS4935

双路30V P沟道PowerTrench MOSFET Dual 30V P-Channel PowerTrench MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings 4.5V – 25V.

Features

• –7 A, –30 V  RDSON= 23 mΩ@ VGS= –10 V

                   RDSON= 35 mΩ@ VGS= –4.5 V

• Low gate charge 15nC typical

• Fast switching speed

• High performance trench technology for extremely low RDSON

• High power and current handling capability

Applications

• Power management

• Load switch

• Battery protection