N沟道 200V 7A
These N-Channel enhancement mode power field effect transistors are produced using "s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control.
Product Highlights
7A, 200V, R
DSon
= 0.4
W
@V
GS
= 10 V
Low gate charge typical 19 nC
Low Crss typical 35 pF
Fast switching
100% avalanche tested
Improved dv/dt capability
额定电压DC 200 V
额定电流 7.00 A
通道数 1
漏源极电阻 400 mΩ
极性 N-CH
耗散功率 2.5 W
漏源极电压Vds 200 V
漏源击穿电压 200 V
连续漏极电流Ids 7.00 A
上升时间 75 ns
输入电容Ciss 550pF @25VVds
额定功率Max 2.5 W
下降时间 64 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 2.5W Ta, 46W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQD630TM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQD7N20TM 飞兆/仙童 | 类似代替 | FQD630TM和FQD7N20TM的区别 |
BSP297 英飞凌 | 功能相似 | FQD630TM和BSP297的区别 |
FDD7N20TM 安森美 | 功能相似 | FQD630TM和FDD7N20TM的区别 |