100V N沟道PowerTrench MOSFET的 100V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDSON and fast switching speed.
Features
• 3.7 A, 100 V. RDSON = 70 mΩ @ VGS = 10 V
RDSON = 80 mΩ @ VGS = 6.0 V
• High performance trench technology for extremely low R DSON
• Low gate charge 23nC typical
• High power and current handling capability
• Fast switching speed.
Applications
• DC/DC converter
• Load Switching
额定电压DC 100 V
额定电流 3.70 A
漏源极电阻 70.0 mΩ
极性 N-Channel
耗散功率 2 W
漏源极电压Vds 100 V
漏源击穿电压 100 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 3.70 A
上升时间 4 ns
输入电容Ciss 1215pF @50VVds
额定功率Max 1.1 W
下降时间 10 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2W Ta
安装方式 Surface Mount
封装 SSOT-6
长度 2.9 mm
宽度 1.6 mm
高度 1.1 mm
封装 SSOT-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Cut Tape CT
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99