FDD6676AS

30V N沟道的PowerTrench SyncFET 30V N-Channel PowerTrench SyncFET

General Description

The is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDSON and low gate charge. The FDD6676AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using ’s monolithic SyncFET technology.

Features

• 90 A, 30 V  RDSON= 5.7 mΩ@ VGS= 10 V

                  RDSON= 7.1 mΩ@ VGS= 4.5 V

• Includes SyncFET schottky body diode

• Low gate charge 46nC typical

• High performance trench technology for extremely low RDSON

• High power and current handling capability

Applications

•DC/DC converter

• Low side notebook