N沟道逻辑电平UltraFET㈢沟槽功率MOSFET 30V , 9A , 70mз N-Channel Logic Level UltraFET㈢ Trench Power MOSFET 30V, 9A, 70mз
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Formerly developmental type 83317
Features
• Fast switching
• rDSON = 0.058Ω Typ, VGS = 10V, ID = 9A
• rDSON = 0.090Ω Typ, VGS = 4.5V, ID = 6A
• QgTOT Typ = 2.6nC, VGS = 5V
• Qgd Typ = 0.8nC
• CISS Typ = 255pF
Applications
• DC/DC converters
额定电压DC 30.0 V
额定电流 9.00 A
漏源极电阻 70.0 mΩ
极性 N-Channel
耗散功率 15 W
输入电容 255 pF
栅电荷 2.60 nC
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 9.00 A
上升时间 41 ns
输入电容Ciss 255pF @15VVds
额定功率Max 15 W
下降时间 23 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 15W Tc
安装方式 Surface Mount
引脚数 2
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Unknown
包装方式 Tape
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FDD6632 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STD17NF03LT4 意法半导体 | 功能相似 | FDD6632和STD17NF03LT4的区别 |
NTD23N03RT4G 安森美 | 功能相似 | FDD6632和NTD23N03RT4G的区别 |
NTD23N03RT4 安森美 | 功能相似 | FDD6632和NTD23N03RT4的区别 |