电源转换器拓扑和MOSFET选择48 -V电信 Power Converter Topology and MOSFET Selection for 48-V Telecom
最大源漏极电压Vds Drain-Source Voltage| 80V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 9A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 22mΩ@ VGS = 6V, ID =8.4A 开启电压Vgs（th） Gate-Source Threshold Voltage| 2~4V 耗散功率Pd Power Dissipation| 2.5W Description & Applications| N-Channel Logic Level Power Trench MOSFET General Description This N-Channel Logic Level MOSFET is produced using Semiconductor"s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • Low gate charge • High performance trench technology for extremely low RDSON •High power and current hanling capability 描述与应用| N沟道逻辑电平功率沟槽MOSFET 概述 这个N-沟道逻辑电平MOSFET采用飞兆半导体先进的功率沟槽进程，已特别是针对减少通态电阻，同时保持出色的开关性能。 这些器件非常适合于低电压和电池供电应用的低线的功率损耗和快速开关是必需的。 特点 •低栅极电荷 •高性能沟道技术极低的RDS（ON） •高功率和电流绫能力
额定电压DC 80.0 V
额定电流 9.00 A
漏源极电阻 19.0 mΩ
极性 N-Channel
耗散功率 2.5 W
漏源极电压Vds 80 V
漏源击穿电压 -100 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 9.00 A
上升时间 12 ns
输入电容Ciss 2750pF @25VVds
额定功率Max 1 W
下降时间 24 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 4.9 mm
宽度 3.9 mm
高度 1.75 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free