20V N沟道PowerTrench MOSFET的 20V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDSON in a small package.
Features
• 23 A, 20 V RDSON = 3.5 mΩ @ VGS = 4.5 V
RDSON = 5.0 mΩ @ VGS = 2.5 V
• High performance trench technology for extremely low RDSON
• High power and current handling capability
• Fast switching
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
• Synchronous rectifier
• DC/DC converter
额定电压DC 20.0 V
额定电流 23.0 A
漏源极电阻 2.90 mΩ
极性 N-Channel
耗散功率 3W Ta
漏源极电压Vds 20 V
漏源击穿电压 20.0 V
栅源击穿电压 ±12.0 V
连续漏极电流Ids 23.0 A
上升时间 25.0 ns
输入电容Ciss 5521pF @10VVds
额定功率Max 3 W
耗散功率Max 3W Ta
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Cut Tape CT
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99