30V N沟道PowerTrench MOSFET的 30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDSON and fast switching speed.
Features
• 84 A, 30 V. RDSON= 5 mΩ@ VGS= 10 V
RDSON= 6 mΩ@ VGS= 4.5 V
• Low gate charge
•Fast switching
• High performance trench technology for extremely low RDSON
Applications
• DC/DC converter
• Motor Drives
额定电压DC 30.0 V
额定电流 84.0 A
漏源极电阻 8.00 mΩ
极性 N-Channel
耗散功率 83W Ta
输入电容 3.84 nF
栅电荷 37.0 nC
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 84.0 A
上升时间 13.0 ns
输入电容Ciss 3845pF @15VVds
额定功率Max 1.6 W
耗散功率Max 83W Ta
安装方式 Surface Mount
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Unknown
包装方式 Tape
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FDD6670AL Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDD6670AL_NL 飞兆/仙童 | 功能相似 | FDD6670AL和FDD6670AL_NL的区别 |