N沟道 600V 12A
Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devicesare well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
Features
• 12A, 600V, R
DSon= 0.65Ω@VGS= 10 V
• Low gate charge typical 48 nC
• Low Crss typical 21pF
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
额定电压DC 600 V
额定电流 12.0 A
通道数 1
漏源极电阻 650 mΩ
极性 N-Channel
耗散功率 225 W
输入电容 2.29 nF
栅电荷 63.0 nC
漏源极电压Vds 600 V
漏源击穿电压 600 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 12.0 A
上升时间 85 ns
输入电容Ciss 2290pF @25VVds
额定功率Max 3.13 W
下降时间 90 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 3.13W Ta, 225W Tc
安装方式 Surface Mount
封装 TO-263-3
长度 10.67 mm
宽度 9.65 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQB12N60CTM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQB12N50 飞兆/仙童 | 类似代替 | FQB12N60CTM和FQB12N50的区别 |
FQB12N60TM 飞兆/仙童 | 类似代替 | FQB12N60CTM和FQB12N60TM的区别 |
FQB12N60TM_AM002 飞兆/仙童 | 类似代替 | FQB12N60CTM和FQB12N60TM_AM002的区别 |