单N沟道逻辑电平PWM优化PowerTrenchTM MOSFET Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET
General Description
ThisN-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDSON specifications.
Features
10 A, 30 V. RDSON= 0.0135 W @ VGS= 10 V
RDSON= 0.0200 W @ VGS= 4.5 V.
Optimized for use in switching DC/DC converters with PWM controllers.
Very fastswitching .
Low gate charge typical 22nC.
额定电压DC 30.0 V
额定电流 10.0 A
漏源极电阻 9.80 mΩ
极性 N-Channel
耗散功率 2.5 W
输入电容 1.34 nF
栅电荷 22.0 nC
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 10.0 A
上升时间 13.0 ns
输入电容Ciss 1340pF @15VVds
额定功率Max 1 W
耗散功率Max 2.5W Ta
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Obsolete
包装方式 Tape
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS4410 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDS4897AC 飞兆/仙童 | 类似代替 | FDS4410和FDS4897AC的区别 |
FDS6690AS 飞兆/仙童 | 类似代替 | FDS4410和FDS6690AS的区别 |
FDS6690S 飞兆/仙童 | 类似代替 | FDS4410和FDS6690S的区别 |