FDW9926A

FAIRCHILD SEMICONDUCTOR  FDW9926A  晶体管, MOSFET, N沟道, 4.5 A, 20 V, 32 mohm, 4.5 V, 1 V

General Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of "s Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 10V.

Features

·  4.5 A, 20 V. RDSON= 32 mW@ VGS= 4.5 V

                   RDSON= 45 mW@ VGS= 2.5 V

·  Optimized for use in battery circuit applications

·  Extended VGSSrange ±10V for battery applications

·  High performance trench technology for extremely low RDSON

·  Low profile TSSOP-8 package