30V N沟道PowerTrench MOSFET的 30V N-Channel PowerTrench MOSFET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R
DSON
and fast switching speed.
Product Highlights
12.5 A, 30 V.
R
DSON
= 8 m
W
@ V
GS
= 10 V
R
DSON
= 9.5 m
W
@ V
GS
= 4.5 V
得捷:
MOSFET N-CH 30V 12.5A 8SOIC
立创商城:
N沟道 30V 12.5A
艾睿:
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R
Chip1Stop:
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R
Win Source:
30V N-Channel PowerTrench MOSFET
额定电压DC 30.0 V
额定电流 12.5 A
漏源极电阻 6.80 mΩ
极性 N-Channel
耗散功率 2.5 W
输入电容 5.07 nF
栅电荷 33.0 nC
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±12.0 V
连续漏极电流Ids 12.5 A
上升时间 18 ns
输入电容Ciss 5070pF @15VVds
额定功率Max 1 W
下降时间 28 ns
耗散功率Max 2.5W Ta
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FDS6672A Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDS8876 飞兆/仙童 | 类似代替 | FDS6672A和FDS8876的区别 |
FDS6672A_NL 飞兆/仙童 | 功能相似 | FDS6672A和FDS6672A_NL的区别 |