30V N沟道的PowerTrench ？ MOSFET 30V N-Channel PowerTrench? MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON , fast switching speed and extremely low RDSONin a small package.
Features
• 56 A, 30 V RDSON= 9.5 mΩ@ VGS= 10 V
RDSON= 13 mΩ@ VGS= 4.5 V
• Low gate charge 23nC typ.
• Fast Switching
• High performance trench technology for extremely low RDSON
漏源极电阻 10.0 mΩ
极性 N-Channel
耗散功率 3.3W Ta, 56W Tc
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 46.0 A
输入电容Ciss 1230pF @15VVds
额定功率Max 1.5 W
耗散功率Max 3.3W Ta, 56W Tc
安装方式 Through Hole
封装 TO-251-3
封装 TO-251-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99