N沟道 600V 12A
Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devicesare well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
Features
• 12A, 600V, R
DSon= 0.65Ω@VGS= 10 V
• Low gate charge typical 48 nC
• Low Crss typical 21pF
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
额定电压DC 600 V
额定电流 12.0 A
漏源极电阻 650 mΩ
极性 N-Channel
耗散功率 3.13W Ta, 225W Tc
输入电容 2.29 nF
栅电荷 63.0 nC
漏源极电压Vds 600 V
漏源击穿电压 600 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 12.0 A
输入电容Ciss 2290pF @25VVds
额定功率Max 3.13 W
耗散功率Max 3.13W Ta, 225W Tc
安装方式 Through Hole
封装 TO-262-3
封装 TO-262-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99