N沟道MOSFET QFET® N-Channel QFET® MOSFET
These N-Channel enhancement mode power field effect transistors are produced using s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Product Highlights
1.9A, 600V, R
DSon
= 4.7
W
@V
GS
= 10 V
Low gate charge typical 8.5 nC
Low Crss typical 4.3 pF
Fast switching
100% avalanche tested
Improved dv/dt capability
额定电压DC 600 V
额定电流 1.90 A
通道数 1
漏源极电阻 4.7 Ω
极性 N-Channel
耗散功率 2.5 W
阈值电压 4 V
输入电容 235 pF
栅电荷 12.0 nC
漏源极电压Vds 600 V
漏源击穿电压 600 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 1.90 mA
上升时间 25 ns
输入电容Ciss 235pF @25VVds
额定功率Max 2.5 W
下降时间 28 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 2.5W Ta, 44W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Obsolete
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQD2N60CTF Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQD2N60CTM 飞兆/仙童 | 类似代替 | FQD2N60CTF和FQD2N60CTM的区别 |
STD3NK60ZT4 意法半导体 | 功能相似 | FQD2N60CTF和STD3NK60ZT4的区别 |
STD2HNK60Z 意法半导体 | 功能相似 | FQD2N60CTF和STD2HNK60Z的区别 |