16Kb的串行3V F-RAM存储器 16Kb Serial 3V F-RAM Memory
Description
The FM24CL16B is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
Features
16K bit Ferroelectric Nonvolatile RAM
• Organized as 2,048 x 8 bits
• High Endurance 1014 Read/Writes
• 38 year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process
Fast Two-wire Serial Interface
• Up to 1MHz Maximum Bus Frequency
• Direct Hardware Replacement for EEPROM
• Supports legacy timing for 100 kHz & 400 kHz
Low Power Operation
• 2.7 - 3.65V Operation
• 100 A Active Current 100 kHz
• 3 A typ. Standby Current
Industry Standard Configuration
• Industrial Temperature -40 C to +85 C
• 8-pin “Green”/RoHS SOIC and TDFN Packages
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FM24CL16B-DGTR Cypress Semiconductor 赛普拉斯 | 当前型号 | 当前型号 |
FM24CL16B-DG 赛普拉斯 | 完全替代 | FM24CL16B-DGTR和FM24CL16B-DG的区别 |