FM28V 系列 256 Kb 32K x 8 3.3 V 70 ns 并行 F-RAM 存储器 - SOIC-28
FRAM(铁电体 RAM) 存储器 IC 256Kb(32K x 8) 并联 140 ns 28-SOIC
得捷:
IC FRAM 256KBIT PARALLEL 28SOIC
立创商城:
FM28V020-SGTR
贸泽:
F-RAM 256K 32Kx8 60ns F-RAM
艾睿:
FRAM 256Kbit Parallel Interface 3.3V 28-Pin SOIC T/R
安富利:
The FM28V020 is a 32 K × 8 nonvolatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM BBSRAM. Fast write timing and high write endurance make the F-RAM superior to other types of memory.The FM28V020 operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Read and write cycles may be triggered by or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM28V020 ideal for nonvolatile memory applications requiring frequent or rapid writes.
富昌:
FM28V 系列 256 Kb 32K x 8 3.3 V 70 ns 并行 F-RAM 存储器 - SOIC-28
Chip1Stop:
NVRAM FRAM Parallel 256K-Bit 3.3V 28-Pin SOIC T/R
TME:
Memory; FRAM; parallel 8bit; 32kx8bit; 256kbit; 2÷3.6VDC; 70ns
Verical:
FRAM 256Kbit Parallel 3.3V 28-Pin SOIC Tape and Reel
Win Source:
IC FRAM 256KBIT 70NS 28SOIC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FM28V020-SGTR Cypress Semiconductor 赛普拉斯 | 当前型号 | 当前型号 |
FM28V020-SG 赛普拉斯 | 完全替代 | FM28V020-SGTR和FM28V020-SG的区别 |
FM25V05-G 赛普拉斯 | 功能相似 | FM28V020-SGTR和FM25V05-G的区别 |
FM25V05-GTR 赛普拉斯 | 功能相似 | FM28V020-SGTR和FM25V05-GTR的区别 |