FQU11P06

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FQU11P06概述

FAIRCHILD SEMICONDUCTOR  FQU11P06  晶体管, MOSFET, P沟道, 9.4 A, -60 V, 185 mohm, -10 V, -4 V

The is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using "s proprietary, planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications. This product is general usage and suitable for many different applications.

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Low gate charge
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100% Avalanche tested
FQU11P06中文资料参数规格
技术参数

针脚数 3

漏源极电阻 0.185 Ω

极性 P-Channel

耗散功率 38 W

漏源极电压Vds 60 V

连续漏极电流Ids 9.40 A

上升时间 40.0 ns

工作温度Max 150 ℃

封装参数

引脚数 3

封装 TO-251

外形尺寸

封装 TO-251

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/06/15

数据手册

在线购买FQU11P06
型号: FQU11P06
制造商: Fairchild 飞兆/仙童
描述:FAIRCHILD SEMICONDUCTOR  FQU11P06  晶体管, MOSFET, P沟道, 9.4 A, -60 V, 185 mohm, -10 V, -4 V
替代型号FQU11P06
型号/品牌 代替类型 替代型号对比

FQU11P06

Fairchild 飞兆/仙童

当前型号

当前型号

FQU17P06

飞兆/仙童

类似代替

FQU11P06和FQU17P06的区别

FQU17P06TU

飞兆/仙童

功能相似

FQU11P06和FQU17P06TU的区别

FQU11P06TU

飞兆/仙童

功能相似

FQU11P06和FQU11P06TU的区别

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