FCB20N60F

FCB20N60F图片1
FCB20N60F图片2
FCB20N60F概述

600V N沟道FRFET 600V N-CHANNEL FRFET

Description

SuperFETTM is, Farichild’s proprietary, new generation ofhigh voltage MOSFET f amily that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance,and withstand extreme dv/ dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency .

Features

• 650V @ TJ =150°C

• Typ.Rdson =0.15:

• Fast RecoveryType trr =160ns

• Ultra low gate charge typ.Qg=75nC

• Low effective output capacitance typ.Coss.eff =165pF

• 100% avalanche tested

FCB20N60F中文资料参数规格
技术参数

极性 N-CH

漏源极电压Vds 600 V

连续漏极电流Ids 20A

封装参数

封装 D2PAK

外形尺寸

封装 D2PAK

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买FCB20N60F
型号: FCB20N60F
制造商: Fairchild 飞兆/仙童
描述:600V N沟道FRFET 600V N-CHANNEL FRFET

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