IGBT 模块 IGBT Module 400A 650V
* Increased blocking voltage capability to 650V * Extended Operation Temperature Tvj op * Low Switching Losses * Low VCEsat * Tvj op = 150°C * VCEsat with positive Temperature Coefficient * Isolated Base Plate * Compact Design * Standard Housing
贸泽:
IGBT 模块 IGBT Module 400A 650V
安富利:
Trans IGBT Module N-CH 650V 460A 21-Pin