30V N沟道的PowerTrench SyncFET 30V N-Channel PowerTrench SyncFET
General Description
The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDSON and low gate charge. The FDD6676AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using ’s monolithic SyncFET technology.
Features
• 90 A, 30 V RDSON= 5.7 mΩ@ VGS= 10 V
RDSON= 7.1 mΩ@ VGS= 4.5 V
• Includes SyncFET schottky body diode
• Low gate charge 46nC typical
• High performance trench technology for extremely low RDSON
• High power and current handling capability
Applications
•DC/DC converter
• Low side notebook