FZT851TA NPN三极管 150V 6A 130MHz 100~300 375mV/0.375V SOT-223 marking/标记 FZT851 高电流（高性能）晶体管
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 150V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 60V 集电极连续输出电流ICCollector CurrentIC| 6A 截止频率fTTranstion FrequencyfT| 130MHz 直流电流增益hFEDC Current GainhFE| 100~300 管压降VCE（sat）Collector-Emitter Saturation Voltage| 375mV/0.375V 耗散功率PcPower Dissipation| 3W Description & Applications| SOT223 NPN SILICON PLANAR HIGH CURRENTHIGH PERFORMANCE TRANSISTORS Extremely low equivalent on-resistance; RCEsat =44mΩ at 5A 6 Amps continuous current, up to 20 Amps peak current Very low saturation voltages Excellent hFE characteristics specified up to 10 Amps 描述与应用| SOT223 NPN硅平面高电流（高性能）晶体管 极低的等效导通电阻;在5A时RCE（饱和）=44mΩ 6安培连续电流，高达20安培的峰值电流 极低的饱和电压 优秀HFE 高达10安培的特性
