FQI4N90

900V N沟道MOSFET 900V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features

• 4.2A, 900V, RDSon = 3.3 Ω @ VGS = 10 V

• Low gate charge typically 24 nC

• Low Crss typically 9.5 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability