30V N通道PowerTrench㈢SyncFET⑩ 30V N-Channel PowerTrench㈢SyncFET⑩
General Description
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDSON and low gate charge. The includes an integrated Schottky diode using ’s monolithic SyncFET technology. The performance of the FDP7030BLS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP7030BL in parallel with a Schottky diode.
Features
· 56 A, 30 V. RDSON = 10.5 mW @ VGS = 10 V
RDSON = 16.5 mW @ VGS = 4.5 V
· Includes SyncFET Schottky body diode
· Low gate charge 15nC typical
· High performance trench technology for extremely low RDSON and fast switching
· High power and current handling capability