FDD6670S

30V N沟道的PowerTrench SyncFET 30V N-Channel PowerTrench SyncFET

General Description

The is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing  a low RDSON and low gate charge. The FDD6670S includes an integrated Schottky diode using ’s monolithic SyncFET technology. The performance of the FDD6670S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6670A in parallel with a Schottky diode.

Features

·  64 A, 30 V   RDSON= 9 mW@ VGS= 10 V

                   RDSON= 12.5 mW@ VGS= 4.5 V

·  Includes SyncFET Schottky body diode

·  Low gate charge 17nC typical

·  High performance trench technology for extremely low RDSON

·  High power and current handling capability

Applications

·  DC/DC converter

·  Motor Drives