FDA20N50

500V N沟道MOSFET 500V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Features

• 20A, 500V, RDSon = 0.24Ω @VGS = 10 V

• Low gate charge typical 45.6 nC

• Low Crss typical 27 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability