FDS6680AS_NL

30V N沟道的PowerTrench SyncFET 30V N-Channel PowerTrench SyncFET

General Description

The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDSON and low gate charge. The FDS6680AS includes an integrated Schottky diode using ’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.

Features

• 11.5 A, 30 V. RDSON max= 10.0 mΩ @ VGS = 10 V

                   RDSON max= 12.5 mΩ @ VGS = 4.5 V

• Includes SyncFET Schottky body diode

• Low gate charge 22nC typical

• High performance trench technology for extremely low RDSON and fast switching

• High power and current handling capability

Applications

• DC/DC converter

• Low side notebooks