LOGIC 60V N沟道MOSFET 60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Features
• 24A, 60V, RDSon= 0.039Ω@ VGS= 10V
• Low gate charge typical 15 nC
• Low Crss typical 50 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 150oC maximum junction temperature rating
• Low level gate drive requirements allowing direct
operation form logic drivers
• RoHS Compliant