FF800R17KE3B2NOSA1概述
1700V IHM 130mm Dual IGBT Module with IGBT3, enlarged diode and AlSiC base-plate - The best solution for your traction and industry applications
Summary of Features:
- .
- High reliability and robust module construction
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- Enlarged Diode for regenerative operation
Benefits:
- .
- High power density for compact inverter designs
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- Standardized housing
得捷:
IGBT MODULE 1700V 800A
艾睿:
IGBT-modules ,Inverter
FF800R17KE3B2NOSA1中文资料参数规格
FF800R17KE3B2NOSA1引脚图与封装图 
在线购买FF800R17KE3B2NOSA1
型号： FF800R17KE3B2NOSA1
制造商：
Infineon
英飞凌
描述：1700V IHM 130mm Dual IGBT Module with IGBT3, enlarged diode and AlSiC base-plate - The best solution for your traction and industry applications
替代型号FF800R17KE3B2NOSA1
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FF800R17KE3B2NOSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
FF800R17KP4B2NOSA2 英飞凌 | 功能相似 | FF800R17KE3B2NOSA1和FF800R17KP4B2NOSA2的区别 |