FP35R12KT4BOSA1

晶体管, IGBT阵列&模块, N沟道, 35 A, 1.85 V, 210 W, 1.2 kV, Module

Summary of Features:

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Low stray inductance module design

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High reliability and power density

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Copper base plate for optimized heat spread

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Solderable pins

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Low switching losses

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High switching frequency

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RoHS-compliant modules

Benefits:

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Compact module concept

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Optimized customer’s development cycle time and cost

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Configuration flexibility