FF200R12MT4BOMA1概述
EconoDUAL™ 2 1200V dual IGBT module with fast trench/fieldstop IGBT4, Emitter Controlled 4 diode and NTC
Summary of Features:
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- High Short Circuit Capability
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- Self Limiting Short Circuit Current
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- Low Switching Losses
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- High Power Density
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- Isolated Base Plate
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- Standard Housing
Benefits:
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- Compact module concept
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- Optimized development cycle time and cost
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- Configuration flexibility
FF200R12MT4BOMA1中文资料参数规格
技术参数
击穿电压集电极-发射极 1200 V
输入电容Cies 14nF @25V
额定功率Max 1050 W
工作温度Max 150 ℃
工作温度Min -40 ℃
耗散功率Max 1050000 mW
封装参数
封装 AG-ECONOD-2
外形尺寸
封装 AG-ECONOD-2
物理参数
工作温度 -40℃ ~ 150℃
其他
产品生命周期 Not Recommended for New Designs
包装方式 Tray
制造应用 Solar, Welding, Uninterruptible Power Supply UPS, Drives, Induction Heating
符合标准
RoHS标准
含铅标准 Lead Free
FF200R12MT4BOMA1引脚图与封装图 
在线购买FF200R12MT4BOMA1
型号： FF200R12MT4BOMA1
制造商：
Infineon
英飞凌
描述：EconoDUAL™ 2 1200V dual IGBT module with fast trench/fieldstop IGBT4, Emitter Controlled 4 diode and NTC