晶体管, IGBT阵列&模块, N沟道, 840 A, 2 V, 3.15 kW, 1.7 kV, Module
Summary of Features:
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Low Switching Losses
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Unbeatable Robustness
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V CEsat with positive Temperature Coefficient
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Low V CEsat
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Package with CTI > 400
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High Creepage and Clearance Distances
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Isolated Base Plate
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Standard Housing
Benefits:
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Flexibility
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Optimal electrical performance
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Highest reliability