FCX789A 系列 PNP 3 A 25 V 表面贴装 硅 中等功率 晶体管 - SOT-89
Use this versatile PNP GP BJT from Zetex to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 7 V.
频率 100 MHz
额定电压DC -25.0 V
额定电流 -3.00 A
极性 PNP
耗散功率 2000 mW
击穿电压集电极-发射极 25 V
集电极最大允许电流 3A
最小电流放大倍数hFE 300 @10mA, 2V
最大电流放大倍数hFE 300
额定功率Max 2 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89-3
长度 4.5 mm
宽度 2.5 mm
高度 1.5 mm
封装 SOT-89-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99