Trans GP BJT PNP 200V 0.3A 1000mW Automotive 4Pin3+Tab SOT-89 T/R
Add switching and amplifying capabilities to your electronic circuit with this PNP GP BJT from Zetex. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 200 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
频率 150 MHz
额定电压DC -200 V
额定电流 -300 mA
极性 PNP
耗散功率 1 W
击穿电压集电极-发射极 200 V
集电极最大允许电流 0.3A
最小电流放大倍数hFE 85 @250mA, 10V
额定功率Max 1 W
直流电流增益hFE 85
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 1000 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-89-3
封装 SOT-89-3
材质 Silicon
工作温度 -65℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99