500V PNP HIGH VOLTAGE TRANSISTOR IN SOT223
Bipolar BJT Transistor PNP 500V 150mA 60MHz 2W Surface Mount SOT-223
得捷:
TRANS PNP 500V 0.15A SOT223-3
艾睿:
Jump-start your electronic circuit design with this versatile PNP FZT560TC GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 500 V and a maximum emitter base voltage of 7 V.
安富利:
Trans GP BJT PNP 500V 0.15A 4-Pin3+Tab SOT-223 T/R
Verical:
Trans GP BJT PNP 500V 0.15A Automotive 4-Pin3+Tab SOT-223 T/R
频率 60 MHz
额定电压DC -500 V
额定电流 -150 mA
极性 PNP
耗散功率 2 W
击穿电压集电极-发射极 500 V
集电极最大允许电流 0.15A
最小电流放大倍数hFE 80 @50mA, 10V
额定功率Max 2 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-223
封装 SOT-223
材质 Silicon
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FZT560TC Diodes 美台 | 当前型号 | 当前型号 |
FZT560TA 美台 | 完全替代 | FZT560TC和FZT560TA的区别 |