FZTA42TA 编带
The three terminals of this NPN GP BJT from Zetex give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V.
频率 50 MHz
额定电压DC 300 V
额定电流 500 mA
极性 NPN
耗散功率 2 W
击穿电压集电极-发射极 300 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 40 @30mA, 10V
额定功率Max 2 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
封装 TO-261-4
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FZTA42TA Diodes 美台 | 当前型号 | 当前型号 |
DZTA42-13 美台 | 类似代替 | FZTA42TA和DZTA42-13的区别 |
FZTA42TC 美台 | 类似代替 | FZTA42TA和FZTA42TC的区别 |
BF720,115 恩智浦 | 功能相似 | FZTA42TA和BF720,115的区别 |