FZT1151ATA 编带
- 双极 BJT - 单 PNP 40 V 3 A 145MHz 2.5 W 表面贴装型 SOT-223-3
得捷:
TRANS PNP 40V 3A SOT223-3
立创商城:
PNP 40V 3A
艾睿:
Implement this versatile PNP FZT1151ATA GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 7 V.
Allied Electronics:
PNP high gain TX SOT223, FZT1151ATA
安富利:
Trans GP BJT PNP 40V 3A 4-Pin3+Tab SOT-223 T/R
富昌:
FZT1151A 系列 PNP 3 A 40 V 硅 平面 中等功率 晶体管 - SOT-223-3
Chip1Stop:
Trans GP BJT PNP 40V 3A 4-Pin3+Tab SOT-223 T/R
Verical:
Trans GP BJT PNP 40V 3A Automotive 4-Pin3+Tab SOT-223 T/R
儒卓力:
**PNP TRANS. 40V 3A 2,5W SOT223 **
Win Source:
TRANS PNP 40V 3A SOT-223
DeviceMart:
TRANS PNP -40V -3000MA SOT-223
频率 145 MHz
额定电压DC -40.0 V
额定电流 -3.00 A
极性 PNP, P-Channel
耗散功率 3 W
击穿电压集电极-发射极 40 V
集电极最大允许电流 3A
最小电流放大倍数hFE 250 @500mA, 2V
额定功率Max 2.5 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2500 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
封装 TO-261-4
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FZT1151ATA Diodes 美台 | 当前型号 | 当前型号 |
FZT790ATA 美台 | 类似代替 | FZT1151ATA和FZT790ATA的区别 |
FZT790ATC 美台 | 类似代替 | FZT1151ATA和FZT790ATC的区别 |
BDP948 英飞凌 | 功能相似 | FZT1151ATA和BDP948的区别 |