Trans GP BJT PNP 300V 1A 3000mW Automotive 4Pin3+Tab SOT-223 T/R
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP GP BJT from Zetex. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
频率 85 MHz
额定电压DC -300 V
额定电流 -1.00 A
极性 PNP
耗散功率 3 W
击穿电压集电极-发射极 300 V
集电极最大允许电流 1A
最小电流放大倍数hFE 100 @500mA, 10V
额定功率Max 3 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3000 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
封装 TO-261-4
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FZT957TA Diodes 美台 | 当前型号 | 当前型号 |
FZT957TC 美台 | 完全替代 | FZT957TA和FZT957TC的区别 |
FZT957 美台 | 类似代替 | FZT957TA和FZT957的区别 |
PZT2907AT3G 安森美 | 功能相似 | FZT957TA和PZT2907AT3G的区别 |