FCX1151A 系列 PNP 3 A 40 V 表面贴装 硅 功率晶体管 - SOT-89
Thanks to Zetex, your circuit can handle high levels of voltage using the PNP general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
频率 145 MHz
额定电压DC -40.0 V
额定电流 -3.00 A
极性 PNP
耗散功率 2 W
击穿电压集电极-发射极 40 V
集电极最大允许电流 3A
最小电流放大倍数hFE 250 @500mA, 2V
额定功率Max 2 W
直流电流增益hFE 190
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89-3
封装 SOT-89-3
材质 Silicon
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
