TRANS PNP 30V 1A SOT223
Bipolar BJT Transistor PNP 30V 1A 100MHz 2W Surface Mount SOT-223
得捷:
TRANS PNP 30V 1A SOT223-3
艾睿:
The versatility of this PNP FZT589TA GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 7 V.
安富利:
Trans GP BJT PNP 30V 1A 4-Pin3+Tab SOT-223 T/R
Chip1Stop:
Trans GP BJT PNP 30V 1A 4-Pin3+Tab SOT-223 T/R
Win Source:
TRANS PNP 30V 1A SOT223
额定电压DC -30.0 V
额定电流 -1.00 A
极性 PNP
耗散功率 2000 mW
击穿电压集电极-发射极 30 V
集电极最大允许电流 1A
最小电流放大倍数hFE 100 @500mA, 2V
额定功率Max 2 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
封装 TO-261-4
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FZT589TA Diodes 美台 | 当前型号 | 当前型号 |
FZT549TA 美台 | 类似代替 | FZT589TA和FZT549TA的区别 |
FZT589TC 美台 | 功能相似 | FZT589TA和FZT589TC的区别 |