FMMT591TA 编带
The three terminals of this PNP GP BJT from Zetex give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V.
频率 150 MHz
额定电压DC -60.0 V
额定电流 -1.00 A
极性 PNP
耗散功率 0.5 W
击穿电压集电极-发射极 60 V
集电极最大允许电流 1A
最小电流放大倍数hFE 100 @500mA, 5V
额定功率Max 500 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 500 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FMMT591TA Diodes 美台 | 当前型号 | 当前型号 |
FMMT591QTA 美台 | 完全替代 | FMMT591TA和FMMT591QTA的区别 |
DPBT8105-7 美台 | 类似代替 | FMMT591TA和DPBT8105-7的区别 |
ZXTP2039FTA 美台 | 类似代替 | FMMT591TA和ZXTP2039FTA的区别 |