Trans GP BJT PNP 25V 3A 2000mW Automotive 4Pin3+Tab SOT-89 T/R
Zetex has the solution to your circuit"s high-voltage requirements with their PNP general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
频率 135 MHz
额定电压DC -25.0 V
额定电流 -3.00 A
极性 PNP
耗散功率 2 W
增益频宽积 135 MHz
击穿电压集电极-发射极 25 V
集电极最大允许电流 3A
最小电流放大倍数hFE 250 @500mA, 2V
最大电流放大倍数hFE 270
额定功率Max 2 W
直流电流增益hFE 260
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89-3
长度 4.6 mm
宽度 2.6 mm
高度 1.6 mm
封装 SOT-89-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99