GAL18V10B-20LP

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GAL18V10B-20LP概述

SPLD GAL Family 10 Macro Cells 62.5MHz 5V 20Pin PDIP

Description

The GAL18V10, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable E2 floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows the GAL18V10 to consume much less power when compared to its bipolar counterparts. The E2 technology offers high speed <100ms erase times, providing the ability to reprogram or reconfigure the device quickly and efficiently.

Features

• HIGH PERFORMANCE E2CMOS®TECHNOLOGY

— 7.5 ns Maximum Propagation Delay

— Fmax = 111 MHz

— 5.5 ns Maximum from Clock Input to Data Output

— TTL Compatible 16 mA Outputs

— UltraMOS® Advanced CMOS Technology

• LOW POWER CMOS

— 75 mA Typical Icc

• ACTIVE PULL-UPS ON ALL PINS

• E2CELL TECHNOLOGY

— Reconfigurable Logic

— Reprogrammable Cells

— 100% Tested/100% Yields

— High Speed Electrical Erasure <100ms

— 20 Year Data Retention

• TEN OUTPUT LOGIC MACROCELLS

— Uses Standard 22V10 Macrocell Architecture

— Maximum Flexibility for Complex Logic Designs

• PRELOAD AND POWER-ON RESET OF REGISTERS

— 100% Functional Testability

• APPLICATIONS INCLUDE:

— DMA Control

— State Machine Control

— High Speed Graphics Processing

— Standard Logic Speed Upgrade

• ELECTRONIC SIGNATURE FOR IDENTIFICATION

GAL18V10B-20LP中文资料参数规格
技术参数

工作温度Max 75 ℃

工作温度Min 0 ℃

封装参数

安装方式 Through Hole

引脚数 20

封装 DIP-20

外形尺寸

高度 3.3 mm

封装 DIP-20

物理参数

工作温度 0℃ ~ 75℃ TA

其他

产品生命周期 Obsolete

包装方式 Tube

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买GAL18V10B-20LP
型号: GAL18V10B-20LP
描述:SPLD GAL Family 10 Macro Cells 62.5MHz 5V 20Pin PDIP
替代型号GAL18V10B-20LP
型号/品牌 代替类型 替代型号对比

GAL18V10B-20LP

Lattice Semiconductor 莱迪思

当前型号

当前型号

GAL18V10B-15LP

莱迪思

完全替代

GAL18V10B-20LP和GAL18V10B-15LP的区别

GAL18V10B-10LP

莱迪思

完全替代

GAL18V10B-20LP和GAL18V10B-10LP的区别

GAL18V10-15LP

莱迪思

类似代替

GAL18V10B-20LP和GAL18V10-15LP的区别

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