SPLD - 简单可编程逻辑器件 18 INPUT 10 OUTPUT 5 V LOW POWER 15ns
Description
The GAL18V10, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable E2 floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows the GAL18V10 to consume much less power when compared to its bipolar counterparts. The E2 technology offers high speed <100ms erase times, providing the ability to reprogram or reconfigure the device quickly and efficiently.
Features
• HIGH PERFORMANCE E2CMOS®TECHNOLOGY
— 7.5 ns Maximum Propagation Delay
— Fmax = 111 MHz
— 5.5 ns Maximum from Clock Input to Data Output
— TTL Compatible 16 mA Outputs
— UltraMOS® Advanced CMOS Technology
• LOW POWER CMOS
— 75 mA Typical Icc
• ACTIVE PULL-UPS ON ALL PINS
• E2CELL TECHNOLOGY
— Reconfigurable Logic
— Reprogrammable Cells
— 100% Tested/100% Yields
— High Speed Electrical Erasure <100ms
— 20 Year Data Retention
• TEN OUTPUT LOGIC MACROCELLS
— Uses Standard 22V10 Macrocell Architecture
— Maximum Flexibility for Complex Logic Designs
• PRELOAD AND POWER-ON RESET OF REGISTERS
— 100% Functional Testability
• APPLICATIONS INCLUDE:
— DMA Control
— State Machine Control
— High Speed Graphics Processing
— Standard Logic Speed Upgrade
• ELECTRONIC SIGNATURE FOR IDENTIFICATION
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
GAL18V10B-15LJ Lattice Semiconductor 莱迪思 | 当前型号 | 当前型号 |
GAL18V10B-10LJ 莱迪思 | 类似代替 | GAL18V10B-15LJ和GAL18V10B-10LJ的区别 |
GAL18V10B-20LJ 莱迪思 | 类似代替 | GAL18V10B-15LJ和GAL18V10B-20LJ的区别 |
GAL18V10B-15LJN 莱迪思 | 功能相似 | GAL18V10B-15LJ和GAL18V10B-15LJN的区别 |