GT60M303

Trans IGBT Chip N-CH 900V 60A 3Pin3+Tab TO-3PLH

HIGH POWER SWITCHING APPLICATIONS

  Fourth generation IGBT

  FRD included between emitter and collector

  Enhancement mode type

  High speed  IGBT: tf= 0.25μs TYP.

                   FRD : trr= 0.7μs TYP.

  Low saturation voltage  : VCE sat= 2.1V TYP.

艾睿:
Trans IGBT Chip N-CH 900V 60A 3-Pin3+Tab TO-3PLH

Chip1Stop:
Trans IGBT Chip N-CH 900V 60A 3-Pin3+Tab TO-3PLH

Win Source:
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT