GT20J321

Trans IGBT Chip N-CH 600V 20A 3Pin3+Tab TO-220NIS

High Power Switching Applications

Fast Switching Applications

• Fourth-generation IGBT

• Enhancement mode type

• Fast switching FS: Operating frequency up to 50 kHz reference

   High speed: tf = 0.04 μs typ.

   Low switching loss : Eon = 0.40 mJ typ.

                            : Eoff = 0.43 mJ typ.

• Low saturation voltage: VCE sat = 2.0 V typ.

• FRD included between emitter and collector

Chip1Stop:
Trans IGBT Chip N-CH 600V 20A 3-Pin3+Tab TO-220NIS