Trans IGBT Chip N-CH 400V 50A 3Pin TO-3PLH
The 4th Generation
Current Resonance Inverter Switching Applications
• FRD included between emitter and collector
• Enhancement-mode
• High speed: tf = 0.30 µs typ. IC = 60 A
• Low saturation voltage: VCE sat = 1.8 V typ. IC = 60 A
Chip1Stop:
Trans IGBT Chip N-CH 400V 50A 3-Pin TO-3PLH
Win Source:
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT