IKW20N60T

INFINEON  IKW20N60T  单晶体管, IGBT, 40 A, 1.5 V, 166 W, 600 V, TO-247, 3 引脚

Summary of Features:

.

Lowest V cesat drop for lower conduction losses

.

Low switching losses

.

Easy parallel switching capability due to positive temperature coefficient in V cesat

.

Very soft, fast recovery anti-parallel Emitter Controlled Diode

.

High ruggedness, temperature stable behavior

.

Low EMI emissions

.

Low gate charge

.

Very tight parameter distribution

Benefits:

.

Highest efficiency – low conduction and switching losses

.

Comprehensive portfolio in 600V and 1200V for flexibility of design

.

High device reliability