IS61C1024AL-12TI

静态随机存取存储器 1Mb 128Kx8 12ns 5v Async 静态随机存取存储器

DESCRIPTION

The ISSI IS61C1024AL/IS64C1024AL is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAMs. They are fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

When CE1is HIGH or CE2 is LOW deselected, the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.

Easy memory expansion is provided by using two Chip Enable inputs, CE1and CE2. The active LOW Write Enable WE controls both writing and reading of the memory.

The IS61C1024AL/IS64C1024AL is available in 32-pin 300-mil SOJ, 32-pin 400-mil SOJ, 32-pin TSOP Type I, 8x20, and 32-pin sTSOP Type I, 8 x 13.4 packages.

FEATURES

• High-speed access time: 12, 15 ns

• Low active power: 160 mW typical

• Low standby power: 1000 µW typical CMOS standby

• Output Enable OE and two Chip Enable CE1and CE2 inputs for ease in applications

• Fully static operation: no clock or refresh required

• TTL compatible inputs and outputs

• Single 5V ±10% power supply

• Commercial, industrial, and automotive temperature ranges available

• Lead free available